Ti-diffusion barrier in Cu-based metallization
- 1 October 1995
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 91 (1-4) , 251-256
- https://doi.org/10.1016/0169-4332(95)00127-1
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
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- Rapid interface parameterization using a single MOS conductance curveSolid-State Electronics, 1983
- A quasi-static technique for MOS C-V and surface state measurementsSolid-State Electronics, 1970