Rapid interface parameterization using a single MOS conductance curve
- 31 August 1983
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 26 (8) , 711-716
- https://doi.org/10.1016/0038-1101(83)90030-8
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Interface states on semiconductor/insulator surfacesC R C Critical Reviews in Solid State Sciences, 1976
- A method to extract interface state parameters from the MIS parallel conductance techniqueSolid-State Electronics, 1973
- Expedient method of obtaining interface state properties from MIS conductance measurementsSolid-State Electronics, 1969
- The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance TechniqueBell System Technical Journal, 1967