A method to extract interface state parameters from the MIS parallel conductance technique
- 1 January 1973
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 16 (1) , 121-124
- https://doi.org/10.1016/0038-1101(73)90133-0
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Expedient method of obtaining interface state properties from MIS conductance measurementsSolid-State Electronics, 1969
- The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance TechniqueBell System Technical Journal, 1967
- Surface states at steam-grown silicon-silicon dioxide interfacesIEEE Transactions on Electron Devices, 1966
- DENSITY OF SiO2–Si INTERFACE STATESApplied Physics Letters, 1966
- An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodesSolid-State Electronics, 1962
- Dispersion and Absorption in Dielectrics I. Alternating Current CharacteristicsThe Journal of Chemical Physics, 1941