Expedient method of obtaining interface state properties from MIS conductance measurements
- 1 December 1969
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 12 (12) , 937-944
- https://doi.org/10.1016/0038-1101(69)90014-8
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance TechniqueBell System Technical Journal, 1967
- TRANSIENT VOLTAGE BREAKDOWN DUE TO AVALANCHE IN MIS CAPACITORSApplied Physics Letters, 1966
- FREQUENCY DEPENDENCE OF THE IMPEDANCE OF DISTRIBUTED SURFACE STATES IN MOS STRUCTURESApplied Physics Letters, 1966
- DENSITY OF SiO2–Si INTERFACE STATESApplied Physics Letters, 1966