Resistive SiC-MESFET mixer
- 7 August 2002
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Wireless Components Letters
- Vol. 12 (4) , 119-121
- https://doi.org/10.1109/7260.993287
Abstract
A single-ended silicon carbide resistive MESFET mixer was designed and characterized. The mixer has a minimum conversion loss of 10.2 dB and an input third order intercept point of 35.7 dBm at 3.3 GHz.Keywords
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