Violet luminescence from anodized microcrystalline silicon
- 5 September 1994
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (10) , 1290-1292
- https://doi.org/10.1063/1.112976
Abstract
Microcrystalline silicon (μ-Si) thin films were anodized in dilute HF solutions in the same manner as forming porous materials. It is demonstrated for the first time that the anodized μ-Si thin films show strong violet luminescence (415 nm) at room temperature. Visible green and red emissions were also observed accompanying the violet luminescence. Structural investigations with scanning electron microscopy indicate that any formation of micrometer-sized pores which is typical for porous silicon does not exist in the anodized μ-Si thin films as reported here. This fact is useful for device applications of silicon-based materials.Keywords
This publication has 7 references indexed in Scilit:
- Rapid-thermal-oxidized porous Si−The superior photoluminescent SiApplied Physics Letters, 1992
- Microstructure of visibly luminescent porous siliconApplied Physics Letters, 1992
- Control of porous Si photoluminescence through dry oxidationApplied Physics Letters, 1992
- Blue Light Emission from Porous SiliconMRS Proceedings, 1992
- New Results on Electroluminescence from Porous SiliconMRS Proceedings, 1992
- Porous silicon formation: A quantum wire effectApplied Physics Letters, 1991
- Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafersApplied Physics Letters, 1990