Intersubbband absorption in narrow Si/SiGe multiple quantum wells without interfacial smearing

13 July 1992

journal article
conference paper
Published by AIP Publishing in Applied Physics Letters

Vol. 61 (2) , 210-212
https://doi.org/10.1063/1.108220

Abstract

Si/Si_1−xGe_x multiple quantum wells with abrupt heterointerfaces have been formed by segregant‐assisted growth (SAG) with Sb. Distinct well‐width dependence of intersubband absorption in the narrow quantum wells has been observed. The well‐width dependence of the absorption peak energy is in good agreement with a calculation based on the Kronig–Penney model where interfacial smearing is taken to be less than 0.4 nm, suggesting the integrity of Si/Si_1−xGe_x interfaces grown by SAG.

Keywords

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