Intersubband absorption in the conduction band of Si/Si1−xGex multiple quantum wells
- 2 December 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (23) , 2977-2979
- https://doi.org/10.1063/1.105817
Abstract
The intersubband absorption of electrons in modulation doped Si/Si1−xGex multiple quantum wells has been observed. Various samples with different well widths and carrier densities have been studied. Narrow absorption lines are observed in waveguide geometry. The measured transition energies are in good agreement with self consistent subband calculations.Keywords
This publication has 17 references indexed in Scilit:
- Hole intersubband absorption in δ-doped multiple Si layersApplied Physics Letters, 1991
- Intersubband absorption in Si1−xGex/Si multiple quantum wellsApplied Physics Letters, 1990
- Infrared resonance excitation of δ-layers-a silicon-based infrared quantum-well detectorThin Solid Films, 1990
- Intersubband absorption in strained InxGa1−xAs/Al0.4Ga0.6As (0≤x≤0.15) multiquantum wellsApplied Physics Letters, 1989
- Photovoltaic detection of infrared light in a GaAs/AlGaAs superlatticeApplied Physics Letters, 1988
- New 10 μm infrared detector using intersubband absorption in resonant tunneling GaAlAs superlatticesApplied Physics Letters, 1987
- Strong 8.2 μm infrared intersubband absorption in doped GaAs/AlAs quantum well waveguidesApplied Physics Letters, 1987
- First observation of an extremely large-dipole infrared transition within the conduction band of a GaAs quantum wellApplied Physics Letters, 1985
- Strain-Induced Two-Dimensional Electron Gas in Selectively DopedSuperlatticesPhysical Review Letters, 1985
- Influence of Uniaxial Stress on the Indirect Absorption Edge in Silicon and GermaniumPhysical Review B, 1966