Se-doped AlGaAs/GaAs HEMTs for stable low-temperature operation
- 1 May 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 11 (5) , 197-199
- https://doi.org/10.1109/55.55248
Abstract
The fabrication of Se-doped AlGaAs/GaAs high electron mobility transistors (HEMTs) is discussed. Because the DX center concentration in Se-doped AlGaAs layers is lower than in Si-doped layers, the drain-current collapses much less at 77 K. The Se-doped HEMTs are therefore suitable for application in low-temperature LSI.<>Keywords
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