Formation of DX Centers by Heavy Si Doping in MBE-Grown Al_xGa_1-xAs with Low Al Content

This publication has 10 references indexed in Scilit:

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  Japanese Journal of Applied Physics, 1985
• A Simple Calculation of the DX Center Concentration Based on an L-Donor Model
  Japanese Journal of Applied Physics, 1985
• Influence of MBE Growth Conditions on Persistent Photoconductivily Effects in N-AlGaAs and Selectively Doped GaAs/AlGaAs Heterostructures
  Japanese Journal of Applied Physics, 1985
• Direct Evidence for the DX Center Being a Substitutional Donor in AlGaAs Alloy System
  Japanese Journal of Applied Physics, 1985
• Chemical trends in the activation energies of D X centers
  Applied Physics Letters, 1984
• Shallow and deep donors in direct-gap $n$-type ${\mathrm{Al}}_x{\mathrm{Ga}}_{1-x}\mathrm{A}\mathrm{s}:\mathrm{S}\mathrm{i}$ grown by molecular-beam epitaxy
  Physical Review B, 1984
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  Physical Review B, 1984
• Donor Levels in Si-Doped AlGaAs Grown by MBE
  Japanese Journal of Applied Physics, 1984
• Assessment of persistent-photoconductivity centers in MBE grown Al x Ga1-x as using capacitance spectroscopy measurements
  Applied Physics A, 1982
• Trapping characteristics and a donor-complex ($\mathrm{DX}$) model for the persistent-photoconductivity trapping center in Te-doped ${\mathrm{Al}}_x{\mathrm{Ga}}_{1-x}\mathrm{As}$
  Physical Review B, 1979