Influence of MBE Growth Conditions on Persistent Photoconductivily Effects in N-AlGaAs and Selectively Doped GaAs/AlGaAs Heterostructures
- 1 June 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (6A) , L408-410
- https://doi.org/10.1143/jjap.24.l408
Abstract
The influence of MBE growth conditions on persistent photoconductivity effects has been investigated both for N-Al0.3Ga0.7As layers and for selectively doped GaAs/N-Al0.3Ga0.7As heterostructures. The concentration of DX centers in the N-AlGaAs layer was proved to be independent of growth conditions, suggesting no relation to any native defect. For the selectively doped GaAs/N-AlGaAs heterostructure, in addition, persistent increase in 2DEG concentration after light exposure at 77 K was also proved to be independent of growth conditions.Keywords
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