The effect of substrate growth temperature on deep levels in n-AlxGa1−xAs grown by molecular beam epitaxy
- 1 October 1981
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (10) , 6165-6167
- https://doi.org/10.1063/1.328516
Abstract
The deep level transient spectroscopy (DLTS) technique has been used to study changes in electron trapping centers as a function of substrate growth temperature (550 °C≲Tsub≲675 °C) in n‐Al0.25Ga0.75As Schottky barriers grown by molecular beam epitaxy (MBE). The principal result is a deep level at Ec−0.78 eV which decreases by over an order of magnitude in concentration as the growth temperature is increased from 575 to 675 °C.This publication has 17 references indexed in Scilit:
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