Equivalent circuit for ion implanted counterdoped layers as determined by MOS admittance and crosstalk measurements
- 16 December 1981
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 68 (2) , 589-601
- https://doi.org/10.1002/pssa.2210680230
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Characterization of MOS structures with buried layersPhysica Status Solidi (a), 1978
- Determination of impurity and mobility distributions in epitaxial semiconducting films on insulating substrate by C-V and Q-V analysisApplied Physics Letters, 1974
- Carrier mobilities in silicon empirically related to doping and fieldProceedings of the IEEE, 1967
- Lateral AC current flow model for metal-insulator-semiconductor capacitorsIEEE Transactions on Electron Devices, 1965