Determination of impurity and mobility distributions in epitaxial semiconducting films on insulating substrate by C-V and Q-V analysis
- 1 September 1974
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 25 (5) , 279-281
- https://doi.org/10.1063/1.1655472
Abstract
The mobility distribution in a semiconducting epitaxial film on insulating substrate is derived from transmission line analysis of Q‐V data combined with the C‐V method for obtaining impurity distribution. The mobility thus obtained is found to agree with that obtained by Hall effect measurements for an n‐type epitaxial GaAs layer on semi‐insulating Cr‐doped GaAs substrate.Keywords
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