Isoconcentration diffusion of zinc in GaAs at 1000° C
- 1 January 1972
- journal article
- Published by Springer Nature in Journal of Materials Science
- Vol. 7 (1) , 68-74
- https://doi.org/10.1007/bf00549552
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- Dependence of the Diffusion Coefficient on the Fermi Level: Zinc in Gallium ArsenidePhysical Review B, 1967
- Diffusion Mechanism of Zn in GaAs and GaP Based on Isoconcentration Diffusion ExperimentsJournal of Applied Physics, 1964
- Solubility of Zinc in Gallium ArsenideJournal of Applied Physics, 1963
- Diffusion in Compound SemiconductorsPhysical Review B, 1961
- Activity Coefficients of Electrons and Holes at High ConcentrationsThe Journal of Chemical Physics, 1960
- Diffusion of zinc in gallium arsenideJournal of Physics and Chemistry of Solids, 1960