On electronic conduction through evaporated silicon oxide films

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Abstract
A new model is proposed to explain the voltage-current characteristics of evaporated silicon oxide films in the whole range of electric field intensity, in which one sort of Poole-Frenkel effect is used and the current conduction is thought of as due to the carrier jumps over the coulomb potential wall from the occupied Poole-Frenkel sites to the empty ones. The voltage-current characteristics are calculated and compared with existing experimental data. We found good agreement between the calculated results of this model and the experimental results.