Conductance fluctuations in ultra-short-channel Si MOSFETS
- 31 March 1987
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 61 (9) , 571-572
- https://doi.org/10.1016/0038-1098(87)90172-4
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Universal conductance fluctuations in silicon inversion-layer nanostructuresPhysical Review Letters, 1986
- Sub-100-nm channel-length transistors fabricated using x-ray lithographyJournal of Vacuum Science & Technology B, 1986
- Aperiodic magnetoresistance oscillations in narrow inversion layers in SiPhysical Review Letters, 1985
- X-ray lithography for sub-100-nm-channel-length transistors using masks fabricated with conventional photolithography, anisotropic etching, and oblique shadowingJournal of Vacuum Science & Technology B, 1985
- Universal Conductance Fluctuations in MetalsPhysical Review Letters, 1985