Electron mobility in multi-FinFET with a (111) channel surface fabricated by orientation-dependent wet etching

This publication has 4 references indexed in Scilit:

• A Highly Threshold Voltage-Controllable 4T FinFET with an 8.5-nm-Thick Si-Fin Channel
  IEEE Electron Device Letters, 2004
• Ideal rectangular cross-section Si-Fin channel double-gate MOSFETs fabricated using orientation-dependent wet etching
  IEEE Electron Device Letters, 2003
• On the universality of inversion layer mobility in Si MOSFET's: Part II-effects of surface orientation
  IEEE Transactions on Electron Devices, 1994
• Calculated threshold-voltage characteristics of an XMOS transistor having an additional bottom gate
  Solid-State Electronics, 1984