Threshold in electron-beam end-pumped II-VI lasers

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Abstract
Electron‐beam end‐pumped lasers from different bulk grown II‐VI compounds have been experimentally studied and compared under similar preparation and excitation conditions. The reasons for the lasing threshold variations are discussed. The first results on e‐beam pumped CdMnTe lasers and end‐pumped CdTe lasers are reported. The order of lowest to highest threshold is found to be from CdSe, ZnCdSe, CdS, CdTe, CdMnTe, and ZnSe. The comparisons between lasing conditions are used to evaluate the contribution of the intrinsic semiconductor parameters to lasing threshold. Experiments with a large number of samples indicate that the influence of intrinsic and extrinsic parameters on lasing threshold are in most cases comparable. Therefore, for most bulk II‐VI lasers, the average threshold pump power density reductions with the elimination of extrinsic factors are expected to be less than several times. These findings are further supported by our threshold and relative slope efficiency measurements on lasers with different output mirror couplings.