The Nature of the Deep Hole Trap in MOS Oxides

1 January 1987

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science

Vol. 34 (6) , 1147-1151
https://doi.org/10.1109/tns.1987.4337444

Abstract

We have investigated hole and electron trapping events at E' deep hole traps in metal-oxide-semiconductor oxides. Using a sequence of ultraviolet irradiations, electron spin resonance measurements, and capacitance versus voltage measurements, we have obtained results which are completely consistent with a simple oxygen vacancy model for the hole trap. However, our results are inconsistent with the bond strain gradient model proposed by Grunthaner et al.

Keywords

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