An n-In0.53Ga0.47As/n-InP rectifier
- 1 September 1981
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (9) , 5838-5842
- https://doi.org/10.1063/1.329479
Abstract
We report the current‐voltage (I‐V), capacitance‐voltage (C‐V), and photoresponse characteristics of n‐In0.53Ga0.47 As/n‐InP heterobarrier diodes. We find the conduction‐band barrier is Δεc = 0.22±0.02 eV. We find thermionic emission is the dominant mechanism for carrier transport across the heterobarrier. Also, to the level of sensitivity of our measurement techniques, no interface states have been detected.This publication has 12 references indexed in Scilit:
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