MBE-grown laser diodes based on beryllium containing II–VI semiconductors
- 1 May 1999
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 201-202, 927-932
- https://doi.org/10.1016/s0022-0248(98)01493-6
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Extremely thick ZnCdSe/ZnSSe multiple quantum-well heterostructures for optoelectronic applicationsJournal of Crystal Growth, 1998
- Reduction of structural defects in II–VI blue green laser diodesApplied Physics Letters, 1996
- ZnCdSe/ZnSe/ZnMgSSe Separate-Confinement Heterostructure Laser Diode with Various Cd Mole FractionsJapanese Journal of Applied Physics, 1994