ZnCdSe/ZnSe/ZnMgSSe Separate-Confinement Heterostructure Laser Diode with Various Cd Mole Fractions
- 1 May 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (5A) , L639
- https://doi.org/10.1143/jjap.33.l639
Abstract
Room temperature pulsed operation of ZnCdSe/ZnSe/ZnMgSSe separate-confinement heterostructure (SCH) lasers has been achieved in a wavelength range from 485.7 to 521.6 nm. We have achieved shorter wavelength blue at room temperature than thus far reported. A decrease in threshold current density J th and a increase in the slope efficiency for ZnCdSe/ZnSe/ZnMgSSe SCH laser diodes were observed as the energy difference between the active and cladding layers was increased. We determined that more than 0.35 eV for ΔE g is necessary in order to suppress the carrier overflow. A high characteristic temperature T 0 of 217 K was achieved for a laser diode with ΔE g of 0.40 eV.Keywords
This publication has 10 references indexed in Scilit:
- 491-nm ZnCeSe/ZnSe/ZnMgSSe SCH Laser Diode with a Low Operating VoltageJapanese Journal of Applied Physics, 1993
- Room temperature continuous operation of blue-green laser diodesElectronics Letters, 1993
- Blue-green injection lasers containing pseudomorphic Zn1−xMgxSySe1−y cladding layers and operating up to 394 KApplied Physics Letters, 1993
- Room temperature pulsed operation of 498 nm laser with ZnMgSSe cladding layersElectronics Letters, 1993
- Blue-green II–VI laser diodesPhysica B: Condensed Matter, 1993
- Plasma Doping of Nitrogen in ZnSe Using Electron Cyclotron ResonanceJapanese Journal of Applied Physics, 1992
- Room temperature blue light emitting p-n diodes from Zn(S,Se)-based multiple quantum well structuresApplied Physics Letters, 1992
- Epitaxial Growth of ZnMgSSe on GaAs Substrate by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1991
- Characteristics of p-type ZnSe Layers Grown by Molecular Beam Epitaxy with Radical DopingJapanese Journal of Applied Physics, 1991
- p-type ZnSe by nitrogen atom beam doping during molecular beam epitaxial growthApplied Physics Letters, 1990