Interface characteristics and excitonic emissions in ZnSe-ZnSSe superlattices fabricated by low-pressure MOCVD
- 1 September 1988
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 33-34, 1059-1065
- https://doi.org/10.1016/0169-4332(88)90416-3
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Excitonic and edge emissions in MOCVD-grown ZnS films and ZnSe-ZnS superlatticesJournal of Crystal Growth, 1988
- Lattice strain and lattice dynamics of ZnSe-ZnTe strained-layer superlatticesJournal of Applied Physics, 1987
- Optical and electrical properties of PbTe-Pb1−xSnxTe superlattices prepared on KC1 by a HWESurface Science, 1984
- Growth conditions and characterization of InGaAs/GaAs strained layers superlatticesJournal of Applied Physics, 1984