Silicon single-electron quantum-dot transistor switch operating at room temperature
- 9 March 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 72 (10) , 1205-1207
- https://doi.org/10.1063/1.121014
Abstract
We fabricated a silicon single-electron quantum-dot transistor, which showed drain current oscillations at room temperature. These oscillations are attributed to electron tunneling through a single siliconquantum dot inside a narrow wire channel. Analysis of its current–voltage characteristic indicates that the energy level separation is about 110 meV and the silicon dot diameter is about 12 nm.Keywords
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