Effects of the growth conditions on the incorporation of deep levels in vapor-grown GaAs
- 1 July 1979
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (7) , 4808-4813
- https://doi.org/10.1063/1.326543
Abstract
The effects of various conditions on the incorporation of deep levels in VPE GaAs were studied by capacitance spectroscopy. Three kinds of electron traps (Ec−0.86 eV, Ec−0.84 eV, and Ec−0.77 eV) and two kinds of hole traps (EV+0.60 eV and EV+0.44 eV) were measured. Trap concentrations increased strongly with increasing growth rate, but were found to be independent of n‐doping level, type of dopants used (S, Se, Si, Ge, Sn), and growth atmosphere (H2 or N2). These experimental results indicate that the centers responsible for these levels are not due to simple substitutional chemical impurities, but are related to native defects or to complexes involving native defects.This publication has 15 references indexed in Scilit:
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