Effect of heat treatment on electron traps in n-type GaAs
- 31 October 1977
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 20 (10) , 799-802
- https://doi.org/10.1016/0038-1101(77)90167-8
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- A study of deep levels in GaAs by capacitance spectroscopyJournal of Electronic Materials, 1975
- A study of electron traps in vapour-phase epitaxial GaAsApplied Physics B Laser and Optics, 1975
- Majority-carrier traps in n - and p -type epitaxial GaAsElectronics Letters, 1975
- Properties of vacancy defects in GaAs single crystalsJournal of Applied Physics, 1975
- Schottky-barrier capacitance measurements for deep level impurity determinationSolid-State Electronics, 1973
- Effect of Heat Treatment on Gallium Arsenide Crystals. I. Thermal Conversion in Excess Arsenic VaporJapanese Journal of Applied Physics, 1969