Two-Dimensional Numerical Analysis of Amorphous-Silicon Field-Effect Transistors
- 1 February 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (2R) , 200-207
- https://doi.org/10.1143/jjap.24.200
Abstract
A two-dimensional transistor model for short-channel amorphous-silicon (a-Si) field-effect transistors has been developed, taking the localized states in a-Si into account, and the basic characteristics of the transistors have been clarified by numerical computation. The mechanisms determining the short-channel transistor performance have been discussed. It is predicted that a 1 µm transistor with satisfactory performance can be fabricated by thinning the active a-Si region to 20 nm.Keywords
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