Ballistic transport in semiconductor alloys
- 1 May 1988
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 63 (9) , 4540-4547
- https://doi.org/10.1063/1.340152
Abstract
No abstract availableThis publication has 18 references indexed in Scilit:
- Materials choice for ballistic transport: Group velocities and mean free paths calculated from realistic band structuresApplied Physics Letters, 1988
- Electronic and transport properties of HgCdTe and HgZnTeJournal of Vacuum Science & Technology A, 1987
- Electron-electron interaction in semiconductors with application to hot-electron transistors in silicon and gallium arsenideJournal of Physics C: Solid State Physics, 1986
- ‘‘Ballistic’’ injection devices in semiconductorsApplied Physics Letters, 1986
- Band structures ofalloysPhysical Review B, 1986
- Direct Observation of Ballistic Transport in GaAsPhysical Review Letters, 1985
- Injected-Hot-Electron Transport in GaAsPhysical Review Letters, 1985
- Tunneling Hot Electron Transistor Using GaAs/AlGaAs HeterojunctionsJapanese Journal of Applied Physics, 1984
- High field transport in GaAs, InP and InAsSolid-State Electronics, 1984
- Ballistic transport in a nonparabolic band structureJournal of Applied Physics, 1981