Some new features of the photoluminescence of SiC(6H), SiC(4H), and SiC(15R)
- 1 July 1994
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 76 (1) , 509-513
- https://doi.org/10.1063/1.357103
Abstract
Low temperature photoluminescence (LTPL) measurements have been performed on 6H, 4H, and 15R polytype SiC crystals. In addition to well‐known emission lines close to the band gap a couple of new features could be observed. Emission lines attributed to the recombination of bound excitons at aluminum acceptors have been seen in all three polytypes. A defect interpreted as a divacancy is described for SiC(4H). In SiC(6H) emission lines due to scandium centers have been observed. Furthermore the effect of a uniaxial stress on the LTPL spectrum is investigated.This publication has 16 references indexed in Scilit:
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