High-speed, low-noise InGaP/GaAs heterojunction bipolar transistors
- 1 December 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 16 (12) , 540-541
- https://doi.org/10.1109/55.475580
Abstract
We have demonstrated self-aligned InGaP/GaAs heterojunction bipolar transistors (HBT's) with excellent dc, microwave, and noise performance. A 3/spl times/10 /spl mu/m/sup 2/ emitter finger device achieved a cutoff frequency of f/sub T/=66 GHz and a maximum frequency of oscillation of f/sub max/=109 GHz. A minimum noise figure of 1.12 dB and an associated gain of 11 dB were measured at 4 GHz. These results are the highest combined f/sub T/+f/sub max/ and the lowest noise figure reported for an InGaP/GaAs HBT and are attributed to material quality and the use of self-aligned base contacts. These data clearly demonstrate the viability of InGaP/GaAs HBT's for high-speed, low-noise circuit applications.Keywords
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