Post-growth doping of bulk CdTe crystals with phosphorus
- 1 February 1992
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 117 (1-4) , 385-390
- https://doi.org/10.1016/0022-0248(92)90780-m
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Coevaporation Effect of Te on P-Type CdTe:Cu Film FormationJapanese Journal of Applied Physics, 1990
- Deep levels in CdTeJournal of Crystal Growth, 1988
- Structural properties of crystals of CdTe grown from the vapour phaseJournal of Crystal Growth, 1985
- Electrical properties of CdTe films and junctionsJournal of Applied Physics, 1985
- II–VI compounds in solar energy conversionJournal of Crystal Growth, 1977
- The Defect Structure of Phosphorus‐Doped CdTeJournal of the Electrochemical Society, 1977
- Models of donor impurity compensation in cadmium tellurideRevue de Physique Appliquée, 1977
- Shallow Acceptor States in ZnTe and CdTePhysical Review B, 1966
- Shallow P acceptor levels in CdTe and ZnTePhysics Letters, 1964
- Semiconducting Cadmium TelluridePhysical Review B, 1954