Structure of interfaces in amorphous silicon/silicon nitride superlattices determined by i n s i t u optical reflectance
- 15 September 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (11) , 631-633
- https://doi.org/10.1063/1.97062
Abstract
The formation of amorphous hydrogenated silicon/silicon nitride (a‐Si: H/a‐SiNx: H) interfaces is observed in real time by in situ optical reflectance measurements from growing a‐Si: H/a‐SiNx: H superlattices. The optical data are interpreted by a model of atomically abrupt interfaces with macroscopic roughness on a scale of 10 Å.Keywords
This publication has 9 references indexed in Scilit:
- Infrared spectroscopy of interfaces in amorphous hydrogenated silicon/silicon nitride superlatticesApplied Physics Letters, 1986
- Transmission electron microscopy study of periodic amorphous multilayersApplied Physics Letters, 1985
- Luminescence and transport in a-Si:H/a-Si1−xNx:H quantum well structuresJournal of Non-Crystalline Solids, 1984
- Properties of amorphous semiconducting multilayer filmsJournal of Non-Crystalline Solids, 1984
- Amorphous Semiconductor SuperlatticesPhysical Review Letters, 1983
- Optical functions of silicon between 1.7 and 4.7 eV at elevated temperaturesPhysical Review B, 1983
- Dielectric function of Si-SiO2 and Si-Si3N4 mixturesJournal of Applied Physics, 1979
- Dielectric Definition of ElectronegativityPhysical Review Letters, 1968
- Surface Studies of Solids by Total Reflection of X-RaysPhysical Review B, 1954