The sources of atomic steps in epitaxial lateral overgrowth of Si
- 31 January 1990
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 99 (1-4) , 229-234
- https://doi.org/10.1016/0022-0248(90)90518-p
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 1 reference indexed in Scilit:
- Epitaxial Lateral Overgrowth of Si by LPE with Sn Solution and Its Orientation DependenceJapanese Journal of Applied Physics, 1989