Mechanism of population inversion in uniaxially strainedp-Ge continuous-wave lasers

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Abstract
The recently observed continuous-wave THz lasing in a uniaxially strained p-Ge under weak electric-field pumping cannot be explained by the mechanism of population inversion for pulse mode lasing from the same sample but by strong electric-field pumping. With a theory including the carrier scattering by impurities, acoustic phonons, and optical phonons, our calculation shows that the specific angular dependence of the impurity scattering and the specific energy dependence of the acoustic-phonon scattering are the origin of the population inversion of the resonant states. We thus complete the theory of population inversion in an electrically pumped uniaxially strained THz p-Ge laser.