1.55 μm reflection-type optical waveguide switch based on SiGe/Si plasma dispersion effect
- 5 July 1999
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 75 (1) , 1-3
- https://doi.org/10.1063/1.124635
Abstract
Based on total internal reflection and plasma dispersioneffect, a SiGe/Si asymmetric optical waveguide switch with transverse injection structure has been proposed and fabricated. The switch performance is measured at the wavelength of 1.55 μm. A modulation depth of 90% at an injection current of 110 mA is obtained, and the switching time is about 0.2 μs. The device reaches a maximum optical switching at the injection current of 120 mA. The extinction ratio is larger than 34 dB and the crosstalk and insertion loss are less than −18.5 and 2.86 dB, respectively.Keywords
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