Silicon-on-insulator asymmetric optical switch based on total internal reflection
- 1 August 1997
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 9 (8) , 1113-1115
- https://doi.org/10.1109/68.605519
Abstract
Based on the large cross-section single-mode rib waveguide condition, total internal reflection (TIR) and the plasma dispersion effect, a silicon-on-insulator (SOI) asymmetric optical waveguide switch with transverse injection structure has been proposed and fabricated, in which the SOI technique utilizes silicon and silicon dioxide thermal bonding and back-polishing. The device performance is measured at a wavelength of 1.3 /spl mu/m. It shows that the extinction ratio and insertion loss are less than -18.1 and 6.3 dB, respectively, at an injection current of 60 mA. Response time is 110 ns.Keywords
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