Low energy, oxygen dose optimization for thin film separation by implanted oxygen
- 20 January 1992
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 12 (1-2) , 41-45
- https://doi.org/10.1016/0921-5107(92)90256-9
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
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- Formation of thin silicon films using low energy oxygen ion implantationNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1991
- Reduced defect density in silicon-on-insulator structures formed by oxygen implantation in two stepsApplied Physics Letters, 1989
- The role of implantation temperature and dose in the control of the microstructure of SIMOX structuresMicroelectronic Engineering, 1988
- High quality Si-on-SiO2 films by large dose oxygen implantation and lamp annealingApplied Physics Letters, 1986
- Diffusivity of oxygen in silicon during steam oxidationApplied Physics Letters, 1982