Dielectric constant and optical confinement in homostructure PbSnTe diode lasers
- 30 November 1982
- journal article
- Published by Elsevier in Infrared Physics
- Vol. 22 (6) , 317-322
- https://doi.org/10.1016/0020-0891(82)90001-x
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Properties of diffused PbSnSe homojunction diode lasersIEEE Journal of Quantum Electronics, 1981
- Liquid-phase-epitaxy homostructure Pb0.85Sn0.15Te diode laser with controlled carrier concentrationApplied Physics Letters, 1980
- V-8 MBE homostructure PbTe diode lasers with CW operation up to 100 KIEEE Transactions on Electron Devices, 1977
- Gain-frequency-current relation for Pb1-xSnxTe double heterostructure lasersIEEE Journal of Quantum Electronics, 1977
- Optical dielectric constant of Pb1−xSnxTe in the narrow-gap regionJournal of Applied Physics, 1976
- Optical constants and band gap of PbTe from thin film studies between 25 and 300°KJournal of Physics and Chemistry of Solids, 1974
- Optical Properties of SomeAlloys Determined from Infrared Plasma Reflectivity MeasurementsPhysical Review B, 1972
- Electrical and Optical Properties of Epitaxial Films of PbS, PbSe, PbTe, and SnTePhysical Review B, 1965
- Electric-Susceptibility Hole Mass of Lead TelluridePhysical Review B, 1965
- Determination of Refractive Index and Correction to Effective Electron Mass in PbTe and PbSeProceedings of the Physical Society, 1963