Gate-Controlled Electron Spin Resonance in a GaAs/AlGaAs Heterostructure

Preprint

2 February 2001

preprint
Published by arXiv in arXiv

https://doi.org/10.48550/arXiv.cond-mat/0102044

Abstract

The electron spin resonance (ESR) of two-dimensional electrons is investigated in a gated GaAs/AlGaAs heterostructure. We found that the ESR resonance frequency can be turned by means of a gate voltage. The front and back gates of the heterostructure produce opposite g-factor shift, suggesting that electron g-factor is being electrostatically controlled by shifting the equilibrium position of the electron wave function from one epitaxial layer to another with different g-factors.

Keywords

GAAS/ALGAAS HETEROSTRUCTURE
ELECTRON SPIN RESONANCE
CONTROLLED ELECTRON
ELECTROSTATICALLY
GATE CONTROLLED
HETEROSTRUCTURE
SPIN RESONANCE
ESR

All Related Versions

Version 1, 2001-02-02, ArXiv
Published version: Physical Review B, 64 (4), 041307.

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