Gate-controlled electron spin resonance in heterostructures
- 3 July 2001
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 64 (4) , 041307
- https://doi.org/10.1103/physrevb.64.041307
Abstract
The electron spin resonance (ESR) of two-dimensional electrons is investigated in a gated GaAs/AlGaAs heterostructure. We found that the ESR resonance frequency can be tuned by means of a gate voltage. The front and back gates of the heterostructure produce opposite g-factor shift, suggesting that electron g factor is being electrostatically controlled by shifting the equilibrium position of the electron wave function from one epitaxial layer to another with different g factors.Keywords
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