Interface morphology studied by angle-resolved soft-x-ray photoemission: Al islands on GaAs(110)

Publisher Website
Google Scholar
Abstract
We have used angle-resolved core-level photoelectron spectroscopy line-shape and intensity analysis to study the morphology of Al overlayers on GaAs(110). Our results demonstrate that this approach can provide easily interpreted structural information about the early stages of interface formation for systems which do not grow smoothly, layer by layer. We find that when Al is deposited at room temperature, island formation occurs for coverages of tens of angstroms. We also demonstrate that Ga selectively diffuses into the Al islands, while As remains localized at or below the GaAs-Al interface.