High quality In0.52Al0.48As grown by modulated arsenic molecular beam epitaxy
- 15 November 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (20) , 2815-2817
- https://doi.org/10.1063/1.110296
Abstract
A modulated arsenic molecular beam epitaxy method has been developed for growing high quality In0.52Al0.48As under a condition compatible to the optimal growth condition of In0.53Ga0.47As without using a buffer layer or growth interruption. In this method, the As shutter is periodically opened and closed while the Al and In shutters are held constantly open. By adjusting the As shutter modulation rate, a layer‐by‐layer growth mode can be maintained throughout the growth as evident from the persistent strong reflection high‐energy electron diffraction intensity oscillations. Without an In0.53Ga0.47As buffer layer, the unintentionally doped In0.52Al0.48As samples grown at 500 °C show very strong photoluminescence intensity and n‐type conductivity with a background carrier concentration of ∼5×1015 cm−3 and electron mobilities of 1900 and 3900 cm2/V s at 300 and 77 K, respectively. Very narrow 77 K photoluminescence spectra have been observed from In0.53Ga0.47As/In0.52Al0.48As quantum well stack structures grown by this new method.Keywords
This publication has 15 references indexed in Scilit:
- Structural and optical properties of Al0.48In0.52As layers grown on InP by molecular beam epitaxy: Influence of the substrate temperature and of a buffer layerJournal of Applied Physics, 1991
- Modulated beam epitaxial growth of high quality GaAs single quantum wells at low temperatureApplied Physics Letters, 1991
- The effect of inhibited growth kinetics on GaInAs and AlInAs alloy and interface qualityJournal of Vacuum Science & Technology B, 1989
- Application of reflection mass spectrometry to molecular-beam epitaxial growth of InAlAs and InGaAsJournal of Vacuum Science & Technology B, 1989
- Strain-induced In incorporation coefficient variation in the growth of Al1−xInxAs alloys by molecular beam epitaxyApplied Physics Letters, 1987
- Comparative study of the growth processes of GaAs, AlGaAs, InGaAs, and InAlAs lattice matched and nonlattice matched semiconductors using high-energy electron diffractionJournal of Applied Physics, 1987
- Role of kinetics and thermodynamics in alloy clustering and surface quality in InAlAs grown by molecular-beam epitaxy: Consequences for optical and transport propertiesJournal of Applied Physics, 1986
- Effects of compositional clustering on electron transport in In0.53Ga0.47AsApplied Physics Letters, 1982
- Optical quality GaInAs grown by molecular beam epitaxyJournal of Electronic Materials, 1982
- Clustering in molecular-beam epitaxial AlxGa1−xAs-GaAs quantum-well heterostructure lasersJournal of Applied Physics, 1981