Strain-induced In incorporation coefficient variation in the growth of Al1−xInxAs alloys by molecular beam epitaxy
- 14 December 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (24) , 1989-1991
- https://doi.org/10.1063/1.98320
Abstract
The reported experimental results demonstrate the influence of the substrate-induced strain on the In incorporation coefficient in the growth of AlInAs by molecular beam epitaxy. AlInAs has either been grown lattice matched to InP or with a 2.3% lattice mismatch with GaAs. The In incorporation coefficient has been determined through reflection high-energy electron diffraction intensity oscillations. The strain effect on the In incorporation coefficient is supported by a thermodynamic analysis applied to the more simple but similar case of strained InAs growth.Keywords
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