Incorporation rates of gallium and aluminum on GaAs during molecular beam epitaxy at high substrate temperatures

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Abstract
Gallium arsenide, aluminum arsenide, and aluminum gallium arsenide epitaxial layers were grown by molecular beam epitaxy in the substrate temperature range 590–720 °C. The incorporation rates of Ga and Al in this temperature range were studied by means of thickness measurements. The growth rates of GaAs and AlxGa1−xAs were observed to be dependent on growth temperature above 640 °C while the AlAs growth rate was observed to be independent of growth temperature in the range investigated. The reduction of the GaAs growth rate at a growth temperature above 640 °C was found to be lessened by the presence of minute amounts of Al and excess As. For the fixed Ga flux and a growth temperature of 700 °C the GaAs growth rate and the Ga contribution to the growth rate of Al0.3Ga0.7As were 0.50 and 0.89 times their low temperature values, respectively, while at 680 °C these values were 0.88 and 0.99, respectively.