A Chemical Etching Process to Obtain Clean InP {001} Surfaces

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Abstract
We report on a new chemical preparation procedure of InP {001} substrates which results in clean, oxide free surfaces, without the need of a high temperature thermal desorption of oxided surface phases. It mainly consists of a deoxidation by HF-ethanol solution, performed on a spinner operated in a nitrogen dry box, after a standard chemical etching using H2SO4/H2O2/H2O mixture. It is shown that such chemically deoxided surfaces are obtained with the typical InP {001} surface reconstructions for a significantly lower annealing temperature than those prepared without this deoxidation step.