The effect of annealing on structural defects in bulk InP
- 1 November 1983
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 64 (1) , 129-136
- https://doi.org/10.1016/0022-0248(83)90259-2
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Control of dislocation structures in LEC single crystal InPJournal of Crystal Growth, 1983
- The nature of prismatic dislocation loops in undoped InPJournal of Electronic Materials, 1983
- Planar self-aligned ion-implanted InP MOSFETElectronics Letters, 1982
- Growth of InP and InGaAsP (E g≥1.15 eV) layers by liquid phase epitaxy under phosphorus overpressureApplied Physics Letters, 1982
- The identification of faulted prismatic dislocation loops in single crystals of undoped InPJournal of Materials Science, 1981
- The deposition of insulators onto InP using plasma-enhanced chemical vapour depositionThin Solid Films, 1981
- Control of substrate degradation IN InP LPE growth with PH3 partial pressureJournal of Crystal Growth, 1979
- Red-emitting Ga(As,P)/(In,Ga)P heterojunction lasersJournal of Applied Physics, 1978
- Etching of Dislocations on the Low-Index Faces of GaAsJournal of Applied Physics, 1965