Growth of InP and InGaAsP (E g≥1.15 eV) layers by liquid phase epitaxy under phosphorus overpressure
- 15 April 1982
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (8) , 731-733
- https://doi.org/10.1063/1.93208
Abstract
A method is presented for the liquid phase epitaxial growth of stoichiometric InP and InGaAsP (Eg⩾1.15 eV) epitaxial layers by creating a phosphorus overpressure in the growth ambient. The effectiveness of the method and the stoichiometry of InP layers can be monitored with the photoluminescent spectra of a phosphorus vacancy‐impurity complex.Keywords
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