Doping of epitaxial silicon
- 1 January 1972
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 12 (1) , 73-75
- https://doi.org/10.1016/0022-0248(72)90343-0
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Doping of epitaxial siliconJournal of Crystal Growth, 1970
- Doping of epitaxial siliconJournal of Crystal Growth, 1970
- Phosphorus and Arsenic Doping of Epitaxial Silicon Films in the 1000° to 1200°C Temperature RangeJournal of the Electrochemical Society, 1969
- Doping of Epitaxial Silicon FilmsJournal of the Electrochemical Society, 1968
- Vapor pressures and phase equilibria in the GaAs systemJournal of Physics and Chemistry of Solids, 1967
- Solid Solubilities of Impurity Elements in Germanium and Silicon*Bell System Technical Journal, 1960
- Theoretical calculation of distribution coefficients of impurities in germanium and silicon, heats of solid solutionJournal of Physics and Chemistry of Solids, 1958