Doping of epitaxial silicon
- 1 November 1970
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 7 (3) , 353-360
- https://doi.org/10.1016/0022-0248(70)90063-1
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Doping of epitaxial silicon-behavior of solid solutionsJournal of Physics and Chemistry of Solids, 1969
- Doping of Epitaxial Silicon FilmsJournal of the Electrochemical Society, 1968
- A Spreading Resistance Technique for Resistivity Measurements on SiliconJournal of the Electrochemical Society, 1966
- Mass-Spectrometric Investigation of the Low-Pressure Dissociation of B2H6The Journal of Chemical Physics, 1964
- Über die Reduktion von Chlorsilanen mit WasserstoffZeitschrift für anorganische und allgemeine Chemie, 1964
- THE HEATS OF FORMATION OF SOME UNSTABLE GASEOUS HYDRIDES1The Journal of Physical Chemistry, 1961
- Activity Coefficients of Electrons and Holes at High ConcentrationsThe Journal of Chemical Physics, 1960
- Theoretical calculation of distribution coefficients of impurities in germanium and silicon, heats of solid solutionJournal of Physics and Chemistry of Solids, 1958
- Chemical Effects Due to the Ionization of Impurities in SemiconductorsThe Journal of Chemical Physics, 1953